features trenchfet power mosfet 175 c junction temperature low thermal resistance package high threshold voltage applications automotive SUM110N02-03 vishay siliconix document number: 71995 s-40571?rev. b, 29-mar-04 www.vishay.com 1 n-channel 20-v (d-s) 175 c mosfet product summary v (br)dss (v) r ds(on) ( ) i d (a) a 20 0.0026 @ v gs = 10 v 110 a d g s n-channel mosfet drain connected to tab to-263 s d g top view ordering information: SUM110N02-03?e3 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 110 a c on ti nuous d ra i n c urren t (t j = 175 c) t c = 125 c i d 110 a a pulsed drain current i dm 300 b a avalanche current i ar 60 repetitive a valanche energy c l = 0.1 mh e ar 180 mj maximum power dissipation c t c = 25 c p d 230 d w maximum power dissipation c t a = 25 c e p d 3.75 w operating junction and storage temperature range t j , t stg ? 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) e r thja 40 c/w junction-to-case r thjc 0.65 c/w notes a. package limited. b. pulse width 300 s, single pulse c. duty cycle 1%. d. see soa curve for voltage derating. e. when mounted on 1? square pcb (fr-4 material).
SUM110N02-03 vishay siliconix www.vishay.com 2 document number: 71995 s-40571?rev. b, 29-mar-04 specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 20 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 3 4 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 16 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v, t j = 125 c 50 a g dss v ds = 16 v, v gs = 0 v, t j = 175 c 250 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 120 a v gs = 10 v, i d = 30 a 0.002 0.0026 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 30 a, t j = 125 c 0.0037 ds(on) v gs = 10 v, i d = 30 a, t j = 175 c 0.0047 forward transconductance a g fs v ds = 15 v, i d = 30 a 20 s dynamic b input capacitance c iss 9300 output capacitance c oss v gs = 0 v, v ds = 10 v, f = 1 mhz 3200 pf reverse transfer capacitance c rss 1820 total gate charge b q g 145 220 gate-source charge b q gs v ds = 10 v, v gs = 10 v, i d = 85 a 50 nc gate-drain charge b q gd ds , gs , d 30 turn-on delay time b t d(on) 30 45 rise time b t r v dd = 10 v, r l = 0.117 80 120 ns turn-off delay time b t d(off) v dd = 10 v , r l = 0 . 117 i d 85 a, v gen = 10 v, r g = 2.5 55 90 ns fall time b t f 30 45 source-drain diode ratings and characteristics (t c = 25 c) c continuous current i s 110 a pulsed current i sm 300 a forward voltage a v sd i f = 85 a, v gs = 0 v 1.1 1.5 v reverse recovery time t rr 65 120 ns peak reverse recovery current i rm i f = 85 a, di/dt = 100 a/ s 1.8 4 a reverse recovery charge q rr f 0.06 0.24 c notes a. pulse test; pulse width 300 s, duty cycle 2%. b. independent of operating temperature. c. guaranteed by design, not subject to production testing.
SUM110N02-03 vishay siliconix document number: 71995 s-40571?rev. b, 29-mar-04 www.vishay.com 3 typical characteristics (25 c unless noted) 0 2000 4000 6000 8000 10000 12000 048121620 0 4 8 12 16 20 0 50 100 150 200 250 300 0 50 100 150 200 250 300 0 102030405060708090 0.000 0.001 0.002 0.003 0.004 0 20 40 60 80 100 120 0 40 80 120 160 200 0123456 0 50 100 150 200 250 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? transconductance (s) g fs 25 c ? 55 c 6 v t c = 125 c v ds = 10 v i d = 85 a v gs = 10 thru 7 v v gs = 10 v c iss c oss t c = ? 55 c 25 c 125 c 5 v ? on-resistance ( r ds(on) ) ? drain current (a) i d i d ? drain current (a) c rss 4 v
SUM110N02-03 vishay siliconix www.vishay.com 4 document number: 71995 s-40571?rev. b, 29-mar-04 typical characteristics (25 c unless noted) drain source breakdown vs. junction t emperature 0.0 0.3 0.6 0.9 1.2 1.5 1.8 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c 0 20 22 24 26 28 30 ? 50 ? 25 0 25 50 75 100 125 150 175 t j ? junction temperature ( c) (v) v (br)dss i d = 10 ma avalanche current vs. time t in (sec) 1000 10 0.00001 0.001 0.1 1 0.1 (a) i dav 0.01 i av (a) @ t a = 150 c 100 1 0.0001 i av (a) @ t a = 25 c r ds(on) ? on-resiistance (normalized)
SUM110N02-03 vishay siliconix document number: 71995 s-40571?rev. b, 29-mar-04 www.vishay.com 5 thermal ratings 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 safe operating area v ds ? drain-to-source voltage (v) 1000 10 0.1 1 10 100 limited by r ds(on) 0.1 100 t a = 25 c single pulse maximum avalanche and drain current vs. case t emperature t c ? ambient t emperature ( c) ? drain current (a) i d normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 3 10 ? 2 10 ? 1 normalized effective transient thermal impedance 1 0.2 0.1 duty cycle = 0.5 ? drain current (a) i d 1 ms 10 ms 100 ms, dc 10 s 100 s single pulse 0.05 0.02 1 10 ? 4
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